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5Pcs IRF3205 Power MOSFET Transistors for High-Power Applications – TO-220 Package – New

For MOSFET applications, IRF3205 Power Transistor is used. Features include a maximum drain current of 110A, a maximum drain-source voltage of 55V, and a maximum gate-source voltage of 20V. With a drain-source on-resistance of 0.0075 ohms and a TO-220 package, this transistor is both durable and efficient.

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Description

5Pcs IRF3205 Power Transistor Field Effector IRF3205PBF TO-220 MOSFET Tube New

The IRF3205 is a high voltage, high speed power MOSFET featuring a low on-resistance and fast switching times. It uses an advanced termination process to minimize the on-state resistance and provide excellent reliability.

Product Features:

  • High voltage: 500V
  • Low on-resistance: 0.15Ω
  • Fast switching times: tr = 15ns, tf = 20ns
  • TO-220 package

Benefits:

  • High efficiency and power density
  • Reduced switching losses
  • Improved reliability

Applications:

  • DC-DC converters
  • Inverters
  • Motor controllers
  • Power supplies

Specifications:

Parameter Value
Drain-source voltage (VDS) 500V
Gate-source voltage (VGS) ±20V
Drain current (ID) 5A
On-resistance (RDS(ON)) 0.15Ω
Switching time (tr, tf) 15ns, 20ns
Package TO-220

Additional Features:

  • Lead-free and RoHS compliant
  • Halogen-free
  • AEC-Q101 qualified

Why Choose the IRF3205?
The IRF3205 is an ideal choice for high voltage, high speed power switching applications. It offers a low on-resistance, fast switching times, and high efficiency. Its robust construction and AEC-Q101 qualification make it suitable for demanding applications in automotive, industrial, and other harsh environments.

External Links:

  • IRF3205 Datasheet
  • IRF3205 Tutorial
  • SKU: 394442694161 Category: Tag:

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    5Pcs IRF3205 Power MOSFET Transistors for High-Power Applications – TO-220 Package – New